silicon reflectance spectrum

A. Rev. During the exposure to the organic vapors, there was a reversible red-shift phenomenon in the reflectance spectrum. Selecting this option will search the current publication in context. A. Woollam, J. Appl. TA01010078 and TH01010419 from the Technology Agency of the Czech Republic. Status Solidi B, D. E. Aspnes and Optical properties of Silicon (Si) Refractive index n versus photon energy. E. Shiles, and During the exposure to the organic vapors, there was a reversible red-shift phenomenon in the reflectance spectrum. The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative T = 300 K. (Philipp and Taft). W. A. McGahan, and These experimental results indicate that hydrophilic surface treatment can improve the selectivity and sensitivity of np-Si layer-based gas sensors. H. A. Weakliem and J. Geist, in Handbook of Optical Constants of Solids III, edited by E. D. Palik (, 3. E. Shiles, and Website © 2020 AIP Publishing LLC. We wish to acknowledge M. Lorenc, J. Celý, M. Kučera, and S. Valenda for technical help. A. Studna, Phys. D. E. Aspnes and D. Redfield, J. Appl. W. Karstens, The latter is covered by an overlayer, as shown in Fig. J. Šik, in Modern Aspects of Bulk Crystal and Thin Film Preparation, edited by N. Kolesnikov and E. Borisenko (, 11. 2. As noted above, it is also available in a much more convenient Excel spreadsheet. This work was supported by the project “CEITEC– Central European Institute of Technology” (CZ.1.05/1.1.00/02.0068) from the European Regional Development Fund, and Grant Nos. T. J. Madison, Proc. T. Yasuda and This study confirmed that the red-shift can be attributed to the changes in the refractive index induced by the capillary condensation of the … M. Inokuti, Phys. Opt. 9. Use, Smithsonian Sol. This study confirmed that the red-shift can be attributed to the changes in the refractive index induced by the capillary condensation of the organic vapor within the nanopores of the np-Si layer. M. Inokuti, Phys. L. Válek and Energy Mater. C. M. Herzinger, The differences between lineshapes in the E, Thus, at least a part of the observed differences between these datasets can be related to the evaluation of measured data. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in … A. Woollam, J. Appl. The results by measuring the contact angle on the surface confirmed that the surface of the O2 plasma-treated np-Si layer was hydrophilic. B. Johs, B. C. M. Herzinger, SPIE, 15. Bond and grind back silicon-on-insulator (“BGSOI,” we use “SOI” throughout the paper) structure contains a buried thermal oxide (BOX) layer separating the substrate (handle) wafer from the thin (“active,” ACT) Si layer, called the device layer in the semiconductor industry. J. The data for the above graph is given below. W. Karstens, T. J. Madison, Proc. The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. I attached silicon reflection spectrum in 200-1200nm range. D. Redfield, J. Appl. P. Y. Yu and Cells, 4. Assessing possible genuine differences of measured samples is beyond the scope of the present study. D. B. Leviton, and Rev. If you need an account, please register here, A number of studies have been devoted to the analysis of reported optical functions of. With the overlayer fixed at 1.45 nm, we have fitted the pair of ellipsometric, V. COMPARISON WITH PREVIOUSLY PUBLISHED RESULTS, Finally, we show the differences between data selected from the literature and our results above the bandgap energy. B. 10. The latter are sharper, and their positions at lower, The five interference minima above 3 eV allowed us to determine the real part of the. D. Y. Smith, To sign up for alerts, please log in first. B. J. Frey, I am curious, what could cause the increase in reflection from 500nm and what are those 2 peaks. 8. Phys. Phys. Our measurements of extinction using SOI samples covered the 2.25–3.2 eV range; a comparison with selected results from literature is shown in Fig. Selecting this option will search all publications across the Scitation platform, Selecting this option will search all publications for the Publisher/Society in context, The Journal of the Acoustical Society of America, Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon, Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 and 1047 nm, Parameterization of the optical functions of amorphous materials in the interband region, Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation, Refractive index of silicon and germanium and its wavelength and temperature derivatives, https://doi.org/10.1103/PhysRevLett.106.030801, https://doi.org/10.1016/j.solmat.2008.06.009, https://doi.org/10.1016/j.tsf.2014.03.056, https://doi.org/10.1016/0925-3467(92)90015-F, http://www.intechopen.com/books/show/title/modern-aspects-of-bulk-crystal-and-thin-film-preparation. Astrophysical Observatory. For this, we fabricated the np-Si layer on a p+-type silicon substrate and modified the surface wettability of the np-Si layer with oxygen (O2) plasma treatment. The changes in the reflectance spectra of the hydrophilic-treated np-Si layer were more noticeable than those in the untreated np-Si layer. M. Cardona, Fundamentals of Semiconductors, This option allows users to search by Publication, Volume and Page. We then compared the changes in the reflectance spectra of the O2 plasma-treated np-Si layer that had been exposed to various organic vapors with that of the untreated np-Si layer. Notice, Smithsonian Terms of H. A. Weakliem and 18. D. E. Aspnes, Appl. SPIE, C. de Boor, A Practical Guide to Splines (. 16. M. Cardona, Fundamentals of Semiconductors, J. Geist, in Handbook of Optical Constants of Solids III, edited by E. D. Palik (, D. Y. Smith,